Method and apparatus for semiconductor processing chamber isolation for reduced particles and improved uniformity

US10679827B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Gopu Krishna · Bengaluru, IN
• Ravikumar Patil · Bengaluru, IN
• Hanish Kumar Panavalappil Kumarankutty · Bengaluru, IN
• Somil KAPADIA · Mumbai, IN
• Sonny Kunnakkat · Bengaluru, IN

Key dates

• Filing date: Jan 10, 2018
• Grant date: Jun 9, 2020
• Expiry date: Apr 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28556
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. The plasma-processing chamber further comprises a substrate support assembly at least partially disposed within the chamber body and configured to support a substrate. The plasma-processing chamber further comprises a lid assembly disposed over the support assembly and positioned on the lid support wherein the lid assembly and the chamber body define a first processing volume. The plasma-processing chamber further comprises a bottom isolation assembly that circumscribes at least a portion of the substrate support assembly and is vertically movable from a loading position to a processing position. A seal is formed between the bottom isolation assembly and the lid assembly when the bottom isolation assembly is in the processing position.