Cleaning process for removing boron-carbon residuals in processing chamber at high temperature
US10679830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32577
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally relate to methods for removing a boron-carbon layer from a surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a processing chamber includes positioning the pedestal at a first distance from the showerhead, and exposing a deposited boron-carbon layer to a first plasma process where the first plasma process comprises generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead that is disposed over a pedestal, and positioning the pedestal at a second distance from the showerhead and exposing the deposited boron-carbon layer to a second plasma process where the second plasma process comprises generating a plasma that comprises water vapor and a second carrier gas by biasing the showerhead and biasing a side electrode relative to the showerhead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.