Etching substrates using ALE and selective deposition
US10685836B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2019 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Mar 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer etch and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma to modify a surface of the substrate and exposing the modified surface to a second plasma at a bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate using a precursor having a chemical formula of CxHy, where x and y are integers greater than or equal to 1. ALE and selective deposition may be performed without breaking vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.