Contact via structures

US10686124B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chih-Chao Yang · Glenmont, US
• Daniel C. Edelstein · White Plains, US
• Bruce B. Doris · Brewster, US
• Henry K. Utomo · Ridgefield, US
• Theodorus E. Standaert · Clifton Park, US
• Nathan P. Marchack · White Plains, US

Key dates

• Filing date: Sep 11, 2018
• Grant date: Jun 16, 2020
• Expiry date: Sep 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76885
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Back end of line (BEOL) metallization structures and methods generally includes forming a landing pad on an interconnect structure. A multilayer structure including layers of metals and at least one insulating layer are provided on the structure and completely cover the landing pad. The landing pad is a metal-filled via and has a width dimension that is smaller than the multilayer structure, or the multilayer structure and the underlying metal conductor in the interconnect structure. The landing pad metal-filled via can have a width dimension that is sub-lithographic.