Silicon oxide selective dry etch process
US10692730B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 30, 2019 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Aug 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.