Inventor · Santa Clara, CA, US

Haichun Yang

15Patents

4h-index

20Co-inventors

56Inventor score

Filing activity: Sep 25, 2007 → Nov 22, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7871926B2	Methods and systems for forming at least one dielectric layer	Electricity	77	Active
US7585762B2	Vapor deposition processes for tantalum carbide nitride materials	Electricity	20	Active
US7780793B2	Passivation layer formation by plasma clean process to reduce native oxide growth	Electricity	16	Active
US8252696B2	Selective etching of silicon nitride	Electricity	4	Active
US10692730B1	Silicon oxide selective dry etch process	Electricity	1	Active
US8318605B2	Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere	Electricity	1	Active
US7989339B2	Vapor deposition processes for tantalum carbide nitride materials	Electricity	1	Active
US7678298B2	Tantalum carbide nitride materials by vapor deposition processes	Electricity	0	Active
US11183397B2	Selective etch process using hydrofluoric acid and ozone gases	Electricity	0	Active
US11251050B2	Silicon oxide selective dry etch process	Electricity	0	Active
US11791166B2	Selective etch process using hydrofluoric acid and ozone gases	Electricity	0	Active
US11164727B2	Processing of workpieces using hydrogen radicals and ozone gas	Electricity	0	Active
US11315801B2	Processing of workpieces using ozone gas and hydrogen radicals	Electricity	0	Active
US7977246B2	Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere	Electricity	0	Active
US11791181B2	Methods for the treatment of workpieces	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.