IC structure with air gap adjacent to gate structure and methods of forming same
US10692987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides an integrated circuit (IC) structure including a first spacer on a semiconductor fin adjacent a first portion of the gate structure, and having a first height above the semiconductor fin; a second spacer on the semiconductor fin adjacent the first spacer, such that the first spacer is horizontally between the first portion of the gate structure and a lower portion of the outer; and a gate cap positioned over the first portion of the gate structure and on the second spacer above the semiconductor fin. The gate cap defines an air gap horizontally between the first portion of the gate structure and an upper portion of the second spacer, and vertically between an upper surface of the first spacer and a lower surface of the gate cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.