Methods and circuits for programming STT-MRAM cells for reducing back-hopping
US10699765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2017 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Circuits and methods for programming a MTJ stack of an MRAM cell minimizes a ferromagnetic free layer or pinned layer polarization reversal due to back-hopping. The programming begins by applying a first segment of the segment of the write pulse at a first write voltage level for a first time period to program the MTJ stack. A second segment of the segment of the write pulse at a second write voltage level that is less than the first write voltage level is applied to the magnetic tunnel junction stack for a second time period to correct the polarization of the MTJ when the MTJ stack has reversed polarization during the first time period. The second segment of the segment of the write pulse may be a ramp, or multiple ramps, or have a quiescent period between it and the first segment of the write pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.