Guenole Jan
110Patents
17h-index
22Co-inventors
82Inventor score
Filing activity: Nov 30, 2010 → Jul 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8852760B2 | Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer | Emerging Cross-Sectional Technologies | 94 | Active |
| US8860156B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 78 | Active |
| US8592927B2 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications | Electricity | 67 | Active |
| US8470462B2 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions | Emerging Cross-Sectional Technologies | 65 | Active |
| US9466789B2 | Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications | Emerging Cross-Sectional Technologies | 52 | Active |
| US9490054B2 | Seed layer for multilayer magnetic materials | Electricity | 50 | Active |
| US9006704B2 | Magnetic element with improved out-of-plane anisotropy for spintronic applications | Electricity | 45 | Active |
| US8541855B2 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Physics | 41 | Active |
| US8946834B2 | High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications | Emerging Cross-Sectional Technologies | 38 | Active |
| US8987849B2 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Electricity | 35 | Active |
| US9425387B1 | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing | Electricity | 35 | Active |
| US8871365B2 | High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications | Emerging Cross-Sectional Technologies | 27 | Active |
| US9472752B2 | High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications | Emerging Cross-Sectional Technologies | 27 | Active |
| US8508006B2 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Electricity | 23 | Active |
| US8921961B2 | Storage element for STT MRAM applications | Electricity | 21 | Active |
| US9373780B2 | Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications | Electricity | 18 | Active |
| US9048411B2 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications | Electricity | 18 | Active |
| US8698260B2 | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications | Electricity | 15 | Active |
| US10014465B1 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Electricity | 14 | Active |
| US9966529B1 | MgO insertion into free layer for magnetic memory applications | Electricity | 14 | Active |
| US9805816B2 | Implementation of a one time programmable memory using a MRAM stack design | Electricity | 13 | Active |
| US10522746B1 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Physics | 11 | Active |
| US9780299B2 | Multilayer structure for reducing film roughness in magnetic devices | Electricity | 10 | Active |
| US8710603B2 | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications | Electricity | 10 | Active |
| US9082960B2 | Fully compensated synthetic antiferromagnet for spintronics applications | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.