Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10699878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2017 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Apr 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.