Patent · US Active

Identifying nuisances and defects of interest in defects detected on a wafer

US10699926B2 · kind B2 · utility

4Cited by
6References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 27, 2018
Grant dateJun 30, 2020
Priority date
Expiry dateSep 6, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Methods and systems fir identifying nuisances and defects of interest (DOIs) in defects detected on a wafer are provided. One method includes acquiring metrology data for the wafer generated by a metrology tool that performs measurements on the wafer at an array of measurement points. In one embodiment, the measurement points are determined prior to detecting the defects on the wafer and independently of the defects detected on the wafer. The method also includes determining locations of defects detected on the wafer with respect to locations of the measurement points on the wafer and assigning metrology data to the defects as a defect attribute based on the locations of the defects determined with respect to the locations of the measurement points. In addition, the method includes determining if the defects are nuisances or DOIs based on the defect attributes assigned to the defects.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.