Ruthenium metal feature fill for interconnects
US10700009B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2018 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Oct 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.