Patent · US Active

Semiconductor device with transistor cells and a drift structure and method of manufacturing

US10700182B2 · kind B2 · utility

0Cited by

2References

26Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Aichinger · Faak am See, AT
Wolfgang Bergner · Waldbüttelbrunn, DE
Romain Esteve · Munich, DE
Daniel Kueck · Villach, AT
Dethard Peters · Edenkoben, DE
Ralf Siemieniec · Villach, AT
Bernd Zippelius · Erlangen, DE

Key dates

Filing date	May 14, 2018
Grant date	Jun 30, 2020
Priority date	—
Expiry date	Dec 28, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/405
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

By using at least one of a processor device and model transistor cells, a set of design parameters for at least one of a transistor cell and a drift structure of a wide band-gap semiconductor device is determined, wherein an on state failure-in-time rate and an off state failure-in-time rate of a gate dielectric of the transistor cell are within a same order of magnitude for a predefined on-state gate-to-source voltage, a predefined off-state gate-to-source voltage, and a predefined off-state drain-to-source voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.