Etching methods
US10707086B2 · kind B2 · utility
36Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2019 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Jan 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.