Method for forming silicon nitride film selectively on top surface
US10720322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Oct 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.