Patent · US Active

Chemistries for TSV/MEMS/power device etching

US10720335B2 · kind B2 · utility

0Cited by

8References

17Claims

0Family size

Assignees

American Air Liquide, Inc. · US
L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR
Air Liquide Electronics U.S. LP · US

Inventors

Peng Shen · Beijing, CN
Christian Dussarrat · Tokyo, JP
Curtis Anderson · Largo, US
Rahul Gupta · Santa Clara, US
Vincent M. Omarjee · Grenoble, FR
Nathan Stafford · Happy Valley, US

Key dates

Filing date	Aug 28, 2018
Grant date	Jul 21, 2020
Priority date	—
Expiry date	Aug 28, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC09K13/00
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1≤x<7, 1≤y≤13, and 1≤z≤13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.