High removal rate chemical mechanical polishing pads and methods of making
US10722999B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 17, 2016 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jun 17, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G18/808
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.