Highly etch selective amorphous carbon film
US10727059B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.