Lateral bipolar junction transistor with abrupt junction and compound buried oxide
US10727299B2 · kind B2 · utility
1Cited by
13References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 2, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Oct 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.