Trench-gate insulated-gate bipolar transistors (IGBTs)

US10727326B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Meng-Chia Lee · Tyhee, US
• Ralph N. Wall · Pocatello, US
• Mingjiao Liu · Gilbert, US
• Shamsul Arefin Khan · Chandler, US
• Gordon M. Grivna · Mesa, US

Key dates

• Filing date: Jan 31, 2018
• Grant date: Jul 28, 2020
• Expiry date: Apr 15, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.