Magnetoresistive random access memory cell
US10727397B1 · kind B1 · utility
2Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.