Method of protecting low-K layers
US10734278B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Jun 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided in which low-k layers are protected from etch damage by the use of a selectively formed protection layer which forms on the low-k layer. In one embodiment, the low-k layers may be low-k dielectric layers utilized in BEOL process steps. In one embodiment, the selectively formed protection layer may be formed by a selective deposition process which selectively forms layers on the low-k dielectric but not over the conductor layer. The selectively formed protection layer may then be utilized to protect the low-k layer from a plasma etch that is utilized to recess the conductor. In this manner, a conductor (for example metal) may be recessed in a low-k dielectric layer via a plasma etch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.