ReRAM structure formed by a single process

US10734575B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alexander Reznicek · Troy, US
• Oscar van der Straten · Guilderland Center, US
• Adra Carr · Albany, US
• Praneet Adusumilli · Albany, US

Key dates

• Filing date: Sep 10, 2019
• Grant date: Aug 4, 2020
• Expiry date: Sep 10, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method of forming a resistive random access memory device which contains uniform layer composition is provided. The method enables the in-situ deposition of a bottom electrode layer (i.e., a metal layer), a resistive switching element (i.e., at least one metal oxide layer), and a top electrode layer (i.e., a metal nitride layer and/or a metal layer) with compositional control. Resistive random access memory devices which contain uniform layer composition enabled by the in-situ deposition of the bottom electrode layer, the resistive switching element, and the top electrode layer provide significant benefits for advanced memory technologies.