High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
US10741682B2 · kind B2 · utility
4Cited by
13References
16Claims
0Family size
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Key dates
| Filing date | Nov 8, 2017 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier hole injection structure. In some implementations, the HEMT devices include a conductive striped portion electrically coupled to a drain contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.