Patent · US Active

Extreme ultraviolet lithography system that utilizes pattern stitching

US10747117B2 · kind B2 · utility

1Cited by

31References

20Claims

0Family size

Assignee

NIKON CORPORATION · JP

Inventors

Michael Binnard · Belmont, US
Daniel Gene Smith · Tucson, US
David M. Williamson · Bethel, US

Key dates

Filing date	Apr 9, 2019
Grant date	Aug 18, 2020
Priority date	—
Expiry date	Apr 9, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70475
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.