Methods and apparatus for depositing yttrium-containing films
US10760159B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 13, 2017 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Apr 14, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.