Dual-column-parallel CCD sensor and inspection systems using a sensor
US10764527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2019 |
| Grant date | Sep 1, 2020 |
| Priority date | — |
| Expiry date | Apr 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D44/454
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.