Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistance
US10770294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2019 |
| Grant date | Sep 8, 2020 |
| Priority date | — |
| Expiry date | Jun 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed that selectively deposit a protective material on the top regions of patterned photoresist layers, such patterned EUV photoresist layers, to provide a protective cap that reduces erosion damage during etch processes used for pattern transfer. Some deposition of the protective material on the sidewalls of the patterned photoresist layer is acceptable, and any deposition of the protective material on the underlying layer below the patterned photoresist layer is preferably thinner than the deposition at the top of the photoresist pattern. Further, the selective deposition of protective caps can be implemented, for example, through the application of high-rotation speeds to spatial atomic layer deposition (ALD) techniques. The selective deposition of protective caps increases the flexibility of options to improve etch resistance for various processes/materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.