Three-dimensional device and method of forming the same

US10770479B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Jeffrey Smith · Clifton Park, US
• Anton J. deVilliers · Boise, US
• Kandabara Tapily · Mechanicville, US
• Jodi Grzeskowiak · Albany, US
• Kai-Hung Yu · Albany, US

Key dates

• Filing date: Mar 19, 2019
• Grant date: Sep 8, 2020
• Expiry date: Mar 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/981
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a plurality of first sources/drains and a plurality of first source/drain (S/D) contacts formed over the first sources/drains. The device also includes a plurality of first dielectric caps. Each of the plurality of first dielectric caps is positioned over a respective first S/D contact to cover a top portion and at least a part of side portions of the respective first S/D contact. The device also includes a plurality of second sources/drains and a plurality of second S/D contacts that are staggered over the plurality of first S/D contacts so as to form a stair-case configuration. A plurality of second dielectric caps are formed over the plurality of second S/D contacts. Each of the plurality of second dielectric caps is positioned over a respective second S/D contact to cover a top portion and at least a part of side portions of the respective second S/D contact.