Semiconductor device including dummy via anchored to dummy metal layer
US10777510B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2017 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Jan 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/33519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacture thereof are provided. The method for manufacturing the semiconductor device includes forming a first dielectric layer on a substrate. Next, forming a first dummy metal layer on the first dielectric layer. Then, forming a second dielectric layer over the first dummy metal layer. Furthermore, forming an opening in the second dielectric layer and the first dummy metal layer. Then, forming a dummy via in the opening, wherein the dummy via extending through the second dielectric layer and at least partially through the first dummy metal layer. Finally, forming a second dummy metal layer on the second dielectric layer and contact the dummy via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.