Bipolar junction transistors with a self-aligned emitter and base

US10777668B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Vibhor Jain · Williston, US
• John J. Pekarik · Underhill, US
• Qizhi Liu · South Burlington, US
• Pernell Dongmo · South Burlington, US

Key dates

• Filing date: Aug 21, 2018
• Grant date: Sep 15, 2020
• Expiry date: Aug 21, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Device structures and fabrication methods for a bipolar junction transistor. A trench isolation region surrounds an active region that includes a collector. A base layer is arranged over the active region, and a semiconductor layer is arranged on the base layer. The semiconductor layer includes a stepped profile with a first section having a first width adjacent to the base layer and a second section having a second width that is less than the first width. An emitter is arranged on the second section of the semiconductor layer.