Cobalt etch back
US10784086B2 · kind B2 · utility
7Cited by
34References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Jul 9, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.