Methods for forming doped silicon oxide thin films
US10784105B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Dec 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.