Semiconductor device and method of forming the semiconductor device

US10784159B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lawrence A. Clevenger · Saratoga Springs, US
• Baozhen Li · South Bend, US
• Kirk D. Peterson · Jericho, US
• John E. Sheets, II · Zumbrota, US
• Junli Wang · Slingerlands, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Feb 28, 2019
• Grant date: Sep 22, 2020
• Expiry date: Feb 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76895
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a first dielectric layer including a first contact hole, a second dielectric layer formed on the first dielectric layer, and including a second contact hole aligned with the first contact hole, and a reflowed copper layer formed in the first and second contact holes.