Maintaining channel pre-charge in program operation
US10790003B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Jul 31, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques are described for maintaining a pre-charge voltage in a NAND string in a program operation. After a pre-charge voltage is applied to the channel of a NAND string, the word line voltages are controlled to avoid a large channel gradient which generates electron-hole pairs, where the electrons can pull down the channel boosting level on the drain side of the selected word line. In one approach, the word line voltages of a group of one or more source side word lines adjacent to the selected word line are increased directly from the level used during pre-charge to a pass voltage. The word line voltages of other source side word lines, and of drain side word lines, can be decreased and then increased to the pass voltage to provide a large voltage swing which couples up the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.