Methods and apparatus for electron beam etching process

US10790153B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yue Guo · Redwood City, US
• Yang Yang · San Diego, US
• Kartik Ramaswamy · San Jose, US
• Kenneth S. Collins · San Jose, US
• Steven Lane · Porterville, US
• Gonzalo Monroy · San Francisco, US
• Lucy Chen · Santa Clara, US

Key dates

• Filing date: Apr 22, 2019
• Grant date: Sep 29, 2020
• Expiry date: Apr 22, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3341
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.