Post-etch residue removal for advanced node beol processing
US10790187B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jan 17, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Jun 23, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.