Surface treatment of silicon and carbon containing films by remote plasma with organic precursors
US10804109B2 · kind B2 · utility
3Cited by
13References
27Claims
0Family size
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Key dates
| Filing date | Apr 20, 2018 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Apr 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Surface treatment processes for treating low-k dielectric materials are provided. One example implementation can include a method for processing a workpiece. The workpiece can include a silicon and carbon containing film material. The method can include treating the workpiece with a surface treatment process. The surface treatment process can include generating one or more species in a first chamber; mixing one or more hydrocarbon molecules with the species to create a mixture comprising one or more organic radicals; and exposing the silicon and carbon containing layer on the workpiece to the mixture in a second chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.