Method for etching a carbon-containing feature
US10811256B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Oct 16, 2018 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Oct 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.