Patent · US Active

Methods for gapfill in high aspect ratio structures

US10811303B2 · kind B2 · utility

0Cited by

32References

9Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Pramit Manna · Sunnyvale, US
Ludovic Godet · Sunnyvale, US
Rui Cheng · San Jose, US
Erica Chen · Cupertino, US
Ziqing Duan · Sunnyvale, US
Abhijit Basu Mallick · Palo Alto, US
Srinivas Gandikota · Santa Clara, US

Key dates

Filing date	Jan 28, 2019
Grant date	Oct 20, 2020
Priority date	—
Expiry date	Jan 28, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/115
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.