Semiconductor structure and forming method thereof
US10811380B2 · kind B2 · utility
1Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Apr 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a first substrate; a first adhesive layer disposed on a surface of the first substrate; and a first bonding layer disposed on a surface of the first adhesive layer. A density of the first adhesive layer is greater than a density of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and first bonding layer, such that it is advantageous to improve a performance of the semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.