Inventor · 红钢城街道, CN

Xianjin Wan

14Patents

3h-index

19Co-inventors

49Inventor score

Filing activity: Jul 26, 2018 → Aug 8, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US10553604B2	Through array contact structure of three-dimensional memory device	Electricity	21	Active
US10910397B2	Through array contact structure of three- dimensional memory device	Electricity	5	Active
US11785776B2	Through array contact structure of three-dimensional memory device	Electricity	3	Active
US11177231B2	Bonding contacts having capping layer and method for forming the same	Electricity	2	Active
US10811380B2	Semiconductor structure and forming method thereof	Electricity	1	Active
US10886291B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	Electricity	1	Active
US10818631B2	Semiconductor structure and method of forming the same	Electricity	1	Active
US11545505B2	Through array contact structure of three-dimensional memory device	Electricity	1	Active
US11482532B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	Electricity	0	Active
US11956953B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	Electricity	0	Active
US10847532B2	Joint opening structures of three-dimensional memory devices and methods for forming the same	General	0	Revoked
US11715718B2	Bonding contacts having capping layer and method for forming the same	Electricity	0	Active
US12185550B2	Through array contact structure of three-dimensional memory device	Electricity	0	Active
US12394751B2	Method of forming semiconductor structure	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.