Patent · US Active

Semiconductor structure and method of forming the same

US10818631B2 · kind B2 · utility

1Cited by

2References

16Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Xinsheng Wang · 红钢城街道, CN
Li Zhang · Chicago, US
Gaosheng Zhang · 流花街道, CN
Xianjin Wan · 红钢城街道, CN
Ziqun Hua · 红钢城街道, CN
Jiawen WANG · 红钢城街道, CN
Taotao DING · 红钢城街道, CN
Hongbin Zhu · Boise, US
Weihua Cheng · Hubei, CN
Shining YANG · 红钢城街道, CN

Key dates

Filing date	Apr 7, 2019
Grant date	Oct 27, 2020
Priority date	—
Expiry date	Apr 7, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2225/06513
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor structure and a method of forming the same are provided. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesive layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesive layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.