Semiconductor device with undercutted-gate and method of fabricating the same
US10825931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2018 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Feb 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a dielectric layer, a gate structure, a source semiconductor feature, and a drain semiconductor feature. The semiconductor substrate has an active area and a shallow trench isolation (STI) structure surrounding the active area. The semiconductor substrate includes a protrusion structure in the active area and has an undercut at a periphery of the active area. The dielectric layer overlays the protrusion structure of the semiconductor substrate and fills at least a portion of the undercut of the protrusion structure. The gate structure crosses over the protrusion structure. The source semiconductor feature and the drain semiconductor feature are located in the active area and positioned at opposite sides of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.