Fin reveal forming STI regions having convex shape between fins

US10832965B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Yiheng Xu · Hopewell Junction, US
• Haiting Wang · Clifton Park, US
• Qun Gao · Clifton Park, US
• Scott Beasor · Greenwich, US
• Kyung-Bum Koo · Yongin-si, KR
• Ankur Arya · Saratoga Springs, US

Key dates

• Filing date: Jan 11, 2018
• Grant date: Nov 10, 2020
• Expiry date: Jan 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Integrated circuit devices include trenches in a material layer that divide the material layer into fins. With such devices, an insulator partially fills the trenches and contacts the material layer. The top surface of the insulator (e.g., the surface opposite where the insulator contacts the material layer) has a convex dome shape between at least two of the fins. The dome shape has a first thickness from (from the bottom of the trench) where the insulator contacts the fins, and a second thickness that is greater than the first thickness where the insulator is between the fins. Further, there is a maximum thickness difference between the first and second thicknesses at the midpoint between the fins (e.g., the highest point of the dome shape is at the midpoint between the fins). Also, the top surface of the first insulator has concave divots where the first insulator contacts the fins.