Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
US10833150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2018 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Jul 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B99/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for converting a dielectric material including a type IV transition metal into a crystalline material that includes forming a predominantly non-crystalline dielectric material including the type IV transition metal on a supporting substrate as a component of an electrical device having a scale of microscale or less; and converting the predominantly non-crystalline dielectric material including the type IV transition metal to a crystalline crystal structure by exposure to energy for durations of less than 100 milliseconds and, in some instances, less than 10 microseconds. The resultant material is fully or partially crystallized and contains a metastable ferroelectric phase such as the polar orthorhombic phase of space group Pca21 or Pmn21. During the conversion to the crystalline crystal structure, adjacently positioned components of the electrical devices are not damaged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.