Plasma enhanced CVD with periodic high voltage bias
US10840086B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Oct 27, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.