Non-volatile memory with capacitors using metal under signal line or above a device capacitor
US10847452B2 · kind B2 · utility
3Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Oct 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad and the ground I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the signal lines and/or above device capacitors on the top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.