Semiconductor die singulation using a sacrificial bonding material layer and an anisotropic channel etch
US10854573B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Jan 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.