Patent · US Active

Semiconductor device, microphone and methods for forming a semiconductor device

US10858246B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Kahn · Rangersdorf, AT
Anna-Katharina Kaiser · Regen, DE
Soenke Pirk · Villach, AT
Juergen Steinbrenner · Zistersdorf, AT
Julia-Magdalena Straeussnigg · Villach, AT

Key dates

Filing date	Feb 21, 2018
Grant date	Dec 8, 2020
Priority date	—
Expiry date	Apr 2, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH04R2201/003
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.